Defects production and annealing in self-implanted Si

Self-consistent determination of the perpendicular strain profile of implanted Si by analysis of x-ray rocking curves

Results of a determination of strain perpendicular to the surface and of the damage in ( 100) Si single crystals irradiated by 250-keV Ar + ions at 77 K are presented. Double-crystal x-ray diffraction and dynamical x-ray diffraction theory are used. Trial strain and damage distributions were guided by transmission electron microscope observations and Monte Carlo simulation of ion energy deposit...

Damage production and annealing in 28Si-implanted CoSi,/Si(l 11) heterostructures

The damage in epitaxial Co& films 500 nm thick grown on Si( 111) produced by roomtemperature implantation of 150 keV **Si were investigated by 2-MeV 4He channeling spectrometry, double-crystal x-ray diffractometry, and electrical resistivity measurements. The damage in the films can be categorized into two types. In lightly (heavily) damaged CoSi, the damage is in the form of point-like (extend...

Effect of ion mass on the evolution of extended defects during annealing of MeV ion- implanted p-type Si

Defects in Ge and Si caused by 1 MeV Si+ implantation

Cross-sectional transmission electron microscopy was used to study defect formation and evolution in the !001" Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si+ at a dose of 1 !1014 cm−2. As expected, upon annealing, the #311$ extended defects form and subsequently dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no #311$ defect formation is observed f...

Hydrogen plasma treatment of silicon thin-film structures and nanostructured layers

The review concentrates on the analysis of the RF hydrogen plasma effect on thin-film metal-dioxide-silicon and silicon-dioxide silicon structures which are a modern basis of microand nanoelectronics. The especial attention is paid to athermic mechanisms of transformation of defects in dioxide, SiO2-Si interface and SiO2-Si nanocrystal ones and thin layers of silicon; atomic hydrogen influence ...